Investigation of mass transport phenomena in an upflow cold-wall CVD reactor by gas phase Raman spectroscopy and modeling

نویسندگان

  • Jang Y. Hwang
  • Chinho Park
  • Min Huang
  • Tim Anderson
چکیده

Steady and transient mass transport phenomena within an inverted, stagnation-flow, cold-wall CVD reactor were investigated by observing the concentration of a tracer species (CH4) with in situ Raman spectroscopy. The transient studies revealed that the use of matched reactor inlet velocities is crucial to minimize recirculating flow patterns and that the magnitude of the gas velocity is also important in gas switching. In the steady-state studies, it was observed that the existence of a sufficiently large density gradient in the reactor initiates natural convection and under some conditions introduces a flow instability and thus three-dimensional (3-D) flows. The onset of instability was characterized by solutal density difference, gas velocity, and distance traveled by the gas. A steady-state, 2-D axisymmetric reactor model validated with experimental data was used to analyze the measured tracer concentration profiles. r 2005 Published by Elsevier B.V. PACS: 52.75.R; 47.32; 82.80.C; 47.11

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Investigation of an upflow cold-wall CVD reactor by gas phase Raman spectroscopy

The gas phase dynamics of an inverted, stagnation point flow CVD reactor were studied by both experiment and modeling. The axial centerline temperature profile in the reactor was measured by analysis of the rotational Raman spectra from the carrier gas (N or H ) as a function of the inlet flow velocity and the reactor aspect ratio. It was found that a larger temperature gradient 2 2 normal to t...

متن کامل

Numerical Analysis of Inlet Gas-Mixture Flow Rate Effects on Carbon Nanotube Growth Rate

The growth rate and uniformity of Carbon Nano Tubes (CNTs) based on Chemical Vapor Deposition (CVD) technique is investigated by using a numerical model. In this reactor, inlet gas mixture, including xylene as carbon source and mixture of argon and hydrogen as  carrier gas enters into a horizontal CVD reactor at atmospheric pressure. Based on the gas phase and surface reactions, released carbon...

متن کامل

Investigation of the Thermal Decomposition of Triethylgallium Using in situ Raman Spectroscopy and DFT Calculations

Pathways for homogeneous thermal decomposition of (C2H5)3Ga (TEGa) were followed using in situ Raman spectroscopy measurements in an up-flow, cold-wall CVD reactor. The results of Density Functional Theory (DFT) calculations were used to assign measured Raman bands to the decomposition products (Et)3Ga, (DEGa)2, (Et)GaH–Ga(Et)2 and (Et)GaH–GaH2. The results of this study are consistent with bot...

متن کامل

Numerical Procedure to Extract Physical Properties from Raman Scattering Data in a Flow Reactor

A parameter estimation procedure was established to extract physical parameters related to chemical vapor deposition ~CVD! processes, which consists of in situ experimental data collection and computational analysis. Specifically, mass-transport behavior in an up-flow cold-wall CVD reactor was monitored using in situ Raman spectroscopy. A two-dimensional axisymmetric model of the reactor was de...

متن کامل

In situ Raman spectroscopic studies of trimethylindium pyrolysis in an OMVPE reactor

An in situ investigation of thermal decomposition reactions of trimethylindium (TMIn) in a vertical, upflow chemical vapor deposition reactor has been carried out using Raman spectroscopy. Monomethylindium (MMIn) and atomic indium were detected along with the precursor TMIn using N2 as the carrier gas. Atomic indium was identified by the peak at 2215 cm, which is equal to the difference between...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2005